Semiconductor devices and methods of manufacture thereof
US9818603B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2014 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Aug 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a substrate, the substrate includes a first fin, a second fin, and an isolation region disposed between the first fin and the second fin. The second fin includes a different material than a material of the substrate. The method includes forming an oxide over the first fin, the second fin, and a top surface of the isolation region at a temperature of about 400 degrees C. or less, and post-treating the oxide at a temperature of about 600 degrees C. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.