Oxide TFT, preparation method thereof, array substrate, and display device
US9818605B2 · kind B2 · utility
9Cited by
0References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 2, 2013 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.