Infrared sensor device and method for producing an infrared sensor device

US9818792B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Ingo Herrmann · Friolzheim, DE
• Edda Sommer · Stuttgart, DE
• Christoph Schelling · Stuttgart, DE
• Christian Rettig · Reutlingen, DE
• Mirko Hattass · Stuttgart, DE

Key dates

• Filing date: Apr 19, 2013
• Grant date: Nov 14, 2017
• Expiry date: Apr 19, 2033

Classification

• Technology area (CPC G): Physics
• CPC primary: G01J5/80
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.