Semiconductor substrate and semiconductor device including the same
US9818824B2 · kind B2 · utility
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8References
25Claims
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Key dates
| Filing date | Dec 14, 2015 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Dec 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.