Hot-carrier photoelectric conversion device and method thereof
US9818900B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2014 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Feb 19, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
The present invention provides a hot-carrier photoelectric conversion method. The method includes a hot-carrier photoelectric conversion device having a P-type semiconductor layer, an N-type semiconductor layer, and an inorganic conducting light-absorbing layer. The inorganic conducting light-absorbing layer is formed between the P-type semiconductor layer and the N-type semiconductor layer, and an electric field is formed between the P-type semiconductor layer and the N-type semiconductor layer. Moreover, photons are absorbed by the inorganic conducting light-absorbing layer to create electrons and holes. The electrons and holes are respectively shifted by the electric field or diffusion effect to the N-type semiconductor layer and the P-type semiconductor layer, so that the electrons and the holes are respectively conducted outside to create electric energy. Further, the present invention increases the quantity of photons absorbed, and makes electrons and holes be quickly conducted outside, thereby increasing photoelectric conversion efficiency, and creating electric energy with a high open-circuit voltage and a high current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.