Organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and preparation method thereof
US9818963B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2017 |
| Grant date | Nov 14, 2017 |
| Priority date | — |
| Expiry date | Apr 28, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The invention discloses an organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and a preparation method thereof. The preparation method comprises the following steps of 1) cleaning the ITO glass substrate; 2) forming a phosphonic acid or trichlorosilane modified layer; 3) forming an organic coating film layer; and 4) forming an electrode, and finally obtaining the organic electric memory device. By adoption of the method, a series of sandwich-type organic electric memory devices are prepared; meanwhile, the preparation method is simple, convenient, fast, and easy to operate; compared with the conventional device, the turn-on voltage of the organic electric memory device is lowered, the yield of the multi-level system is improved, and the problem of relatively low ternary productivity at present is solved; and therefore, the organic electric memory device has extremely high application value in the future memory fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.