Patent · US Active

Global shutter high dynamic range sensor

US9819882B2 · kind B2 · utility

2Cited by

30References

20Claims

0Family size

Assignee

CAELESTE CVBA · BE

Inventors

Bart Dierickx · Mortsel, BE
Jiaqi Zhu · Ekeren, BE
Ajit Kumar Kalgi · Berchem, BE
Qiang Yao · Baton Rouge, US
Koen Liekens · Berchem, BE
Gaozhan Cai · Ekeren, BE
Bert Luyssaert · Evergem, BE
Dirk Van Aken · Aartselaar, BE
Peng Gao · Nanhu, CN

Key dates

Filing date	Jun 6, 2016
Grant date	Nov 14, 2017
Priority date	—
Expiry date	Jun 6, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/186
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

The present invention provides a pixel circuit comprising a pinned photodiode, at least one first transfer gate for electrically connecting the pinned photodiode to at least one storage node and at least one further transfer gate. The at least one further gate can connect the at least one storage node with at least one floating diffusion node. At least one merging switch is included for allowing connection between the at least one floating diffusion node with one or more capacitor nodes, which can accept charge that exceeds the maximum storage capacity of the storage node.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.