Patent · US Active

Crystal growing systems and crucibles for enhancing heat transfer to a melt

US9822466B2 · kind B2 · utility

0Cited by

11References

20Claims

0Family size

Assignee

Corner Star Limited · CN

Inventors

Tirumani N. Swaminathan · Houston, US
John David Hilker · Holden, US
Salvador Zepeda · Saint Peters, US

Key dates

Filing date	Nov 22, 2013
Grant date	Nov 21, 2017
Priority date	—
Expiry date	Feb 24, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1052
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.