Non-volatile memory devices, memory systems, and methods of operating the same
US9824759B2 · kind B2 · utility
6Cited by
12References
18Claims
0Family size
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Key dates
| Filing date | Jan 29, 2015 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Mar 5, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of programming a non-volatile memory device, a first voltage is applied to a selected memory cell for programming, and a second voltage is applied to a non-selected memory cell. Before the second voltage rises to a predetermined voltage level, which is less than a program voltage level, the first voltage is greater than the second voltage or the second voltage is maintained at greater than a ground voltage level. Related non-volatile memory devices and memory systems are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.