Patent · US Active

Fusible link cell with dual bit storage

US9824769B2 · kind B2 · utility

0Cited by
2References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 4, 2016
Grant dateNov 21, 2017
Priority date
Expiry dateMay 4, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C17/165
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A fuse-programmable register or memory location having a plurality of fusible links of differing electrical characteristics in parallel. In one embodiment, three fusible links with different resistances are provided, such that application of a programming voltage non-uniformly distributes the current among the links, allowing varying voltages to selectively blow one or more of the links. Sensing of the programmed state is performed by applying a voltage across the parallel links and measuring the current in comparison with a plurality of reference currents. Reduction in the overhead chip area per bit and in the serial data communication latency are obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.