Patent · US Active

Method of manufacturing the thin film

US9824891B1 · kind B1 · utility

1Cited by
0References
9Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 22, 2016
Grant dateNov 21, 2017
Priority date—
Expiry dateNov 22, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76254
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention disclosed a method of manufacturing the thin film, which belongs to the technological field of SOI wafer manufacture. By growing a layer of dielectric material (silicon oxide) on the provided high-resistivity silicon wafer, then to grow a layer of amorphous silicon on the dielectric material, to transfer a layer of silicon oxide to the amorphous silicon, to make the mono crystalline silicon exist on the oxidation layer, so that a SOI wafer with a layer of amorphous silicon is manufactured. The process above is completed in specific process conditions. The manufactured thin film, e.g. SOI wafer with amorphous silicon layer, is used main for RF apparatus.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.