Semiconductor formation by lateral diffusion liquid phase epitaxy
US9824892B2 · kind B2 · utility
0Cited by
7References
21Claims
0Family size
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Key dates
| Filing date | May 17, 2012 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Sep 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.