Patent · US Active

Thermal processing in silicon

US9824897B2 · kind B2 · utility

0Cited by

0References

29Claims

0Family size

Assignee

NewSouth Innovations Pty Limited · AU

Inventors

Brett Jason Hallam · Sydney, AU
Matthew Edwards · Mona Vale, AU
Stuart Ross Wenham · Parramatta, AU
Phillip George Hamer · Sydney, AU
Catherine Emily Chan · Sydney, AU
Chee Mun Chong · Sydney, AU
Pei Hsuan Lu · Sydney, AU
Ly Mai · Sydney, AU
Li Hui Song · Sydney, AU
Adeline Sugianto · Sydney, AU
Alison Maree Wenham · Sydney, AU
Guang Qi Xu · Sydney, AU

Key dates

Filing date	Jul 24, 2014
Grant date	Nov 21, 2017
Priority date	—
Expiry date	Jul 24, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for the processing of a device having a crystalline silicon region containing an internal hydrogen source. The method comprises: i) applying encapsulating material to each of the front and rear surfaces of the device to form a lamination; ii) applying pressure to the lamination and heating the lamination to bond the encapsulating material to the device; and iii) cooling the device, where the heating step or cooling step or both are completed under illumination.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.