Patent · US Active

Semiconductor device

US9825024B2 · kind B2 · utility

9Cited by
4References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 30, 2015
Grant dateNov 21, 2017
Priority date
Expiry dateSep 30, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/60
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device is provided. The semiconductor device includes an active region, a gate line, a first metal interconnect, a power rail, and a second metal interconnect. The gate line overlaps the active region and extends along a first direction. The first metal interconnect overlaps the active region and the gate line. The first metal interconnect extends along a second direction intersecting the first direction. The power rail is disposed in a higher layer than the first metal interconnect. The power rail extends along the second direction. The second metal interconnect is disposed in a same layer as the power rail, the second metal interconnect extends along the second direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.