Semiconductor device and driving method thereof
US9825037B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Nov 23, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.