Semiconductor device and manufacturing method of semiconductor device
US9825049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Jan 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
Abstract
A semiconductor device of the present invention has a first insulating film formed between a control gate electrode and a semiconductor substrate and a second insulating film formed between a memory gate electrode and the semiconductor substrate and between the control gate electrode and the memory gate electrode, the second insulating film having a charge accumulating part therein. The second insulating film has a first film, a second film serving as a charge accumulating part disposed on the first film, and a third film disposed on the second film. The third film has a sidewall film positioned between the control gate electrode and the memory gate electrode and a deposited film positioned between the memory gate electrode and the semiconductor substrate. In this structure, the distance at a corner part of the second insulating film can be increased, and electric-field concentration can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.