Photodiode insulation structure

US9825080B2 · kind B2 · utility

Assignee

• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Nayera Ahmed · Crolles, FR
• Francois Roy · Seyssinet-Pariset, FR

Key dates

• Filing date: Dec 17, 2015
• Grant date: Nov 21, 2017
• Expiry date: Dec 17, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/18

Abstract

A structure of insulation between photodiodes formed in a doped semiconductor layer of a first conductivity type extending on a doped semiconductor substrate of the second conductivity type, the insulating structure including a trench crossing the semiconductor layer, the trench walls being coated with an insulating layer, the trench being filled with a conductive material and being surrounded with a P-doped area, more heavily doped than the semiconductor layer.