Semiconductor device

US9825121B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Ryosuke Iijima · Setagaya, JP
• Keiko Ariyoshi · Tsukuba, JP
• Tatsuo Shimizu · Shinagawa, JP
• Kazuto Takao · Tsukuba, JP
• Takashi Shinohe · Yokosuka, JP

Key dates

• Filing date: Dec 16, 2015
• Grant date: Nov 21, 2017
• Expiry date: Dec 16, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A semiconductor device of the embodiment includes an SiC layer of 4H—SiC structure having a surface inclined at an angle from 0 degree to 30 degrees relative to {11-20} face or {1-100} face, a gate electrode, a gate insulating film provided between the surface and the gate electrode, a n-type first SiC region provided in the SiC layer, a n-type second SiC region provided in the SiC layer, a channel forming region provided in the SiC layer between the first SiC region and the second SiC region, the channel forming region provided adjacent to the surface, and the channel forming region having a direction inclined at an angle from 60 degrees to 90 degrees relative to a <0001> direction or a <000-1> direction.