Semiconductor device
US9825126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2015 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Sep 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/817
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A source region of a MOSFET includes a source contact region connected to a source electrode, a source extension region adjacent to a channel region of a well region, and a source resistance control region provided between the source extension region and the source contact region. The source resistance control region includes a low concentration source resistance control region which has an impurity concentration lower than that of the source contact region or the source extension region and a high concentration source resistance control region which is formed between the well region and the low concentration source resistance control region and has an impurity concentration higher than that of the low concentration source resistance control region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.