Method for preparing substrate using germanium condensation process and method for manufacturing semiconductor device using same
US9825151B2 · kind B2 · utility
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3References
14Claims
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Key dates
| Filing date | Jan 27, 2015 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Jan 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention suggests a substrate manufacturing method and a manufacturing method of a semiconductor device comprising: providing a SOI structure having an insulation layer and a silicon layer laminated on a substrate; laminating to form a silicon germanium layer and a capping silicon layer on the SOI structure; implementing oxidation process at two or more temperatures and heat treatment process at least once during the oxidation process to form a germanium cohesion layer and a silicon dioxide layer; and removing the silicon dioxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.