Silicon carbide semiconductor device and manufacturing method for same
US9825164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2014 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Jul 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes a drift layer of a first conductivity type, a source region of the first conductivity type, an active trench formed in penetration through the source region, a base region, a termination trench formed around the active trench, a gate insulating film formed on a bottom surface, a side surface of the active trench, a gate electrode embedded and formed in the active trench with the gate insulating film interposed therebetween, a protective diffusion layer of a second conductivity type formed in a lower portion of the active trench and a part of a lower portion of the termination trench and having a first impurity concentration, and a termination diffusion layer of the second conductivity type formed on an outside of the protective diffusion layer in the lower portion of the termination trench and having a second impurity concentration lower than the first impurity concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.