Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials

US9825191B2 · kind B2 · utility

Assignees

• SUNPOWER CORPORATION · US
• TOTAL MARKETING SERVICES · FR

Inventors

• Michael C. Johnson · Alameda, US
• Kieran Mark Tracy · San Jose, US
• Seung Bum Rim · Pleasanton, US
• Jara Fernandez Martin · Paris, FR
• Périne Jaffrennou · Brussels, BE
• Julien Penaud · Kraainem, BE

Key dates

• Filing date: Jun 27, 2014
• Grant date: Nov 21, 2017
• Expiry date: Apr 30, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A Group III-nitride material layer is disposed above the passivating dielectric layer. In another example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A large direct band gap material layer is disposed above the passivating dielectric layer, the large direct band gap material layer having an energy gap (Eg) of at least approximately 3.3. An anti-reflective coating (ARC) layer disposed on the large direct band gap material layer, the ARC layer comprising a material different from the large direct band gap material layer.