Magnetic memory devices
US9825219B2 · kind B2 · utility
0Cited by
13References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 22, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Apr 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the inventive concepts provide magnetic memory devices. The magnetic memory device includes a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. The free layer includes a perpendicular magnetic material doped with non-magnetic impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.