Integrated CMOS back cavity acoustic transducer and the method of producing the same
US9828240B2 · kind B2 · utility
1Cited by
19References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Feb 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.