Method for producing a pulverulent precursor material, pulverulent precursor material, and use of pulverulent precursor material

US9828546B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Juliane Kechele · Stadtbergen, DE
• Simon Dallmeir · Biessenhofen, DE
• Sonja Tragl · Augsburg, DE
• Daniel Bichler · Augsburg, DE
• Bianca Pohl-Klein · Gilching, DE

Key dates

• Filing date: May 7, 2014
• Grant date: Nov 28, 2017
• Expiry date: Jul 18, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8512
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0≦b≦1 and 0≦c≦ and 0≦d≦1 and 0≦e≦1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.