Electro-optical modulator
US9829726B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 20, 2014 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Feb 20, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/105
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optical modulator includes a substrate 201; an optical waveguide formed of a silicon-containing i-type amorphous semiconductor 204 on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 area crystalline semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.