Patent · US Active

Magnetic read head with antiferromagentic layer

US9830936B2 · kind B2 · utility

1Cited by
691References
4Claims
0Family size

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Key dates

Filing dateNov 17, 2015
Grant dateNov 28, 2017
Priority date
Expiry dateMar 27, 2036

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/1114
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.