Patent · US Active

Method of fabricating semiconductor device and semiconductor device fabricated thereby

US9831251B2 · kind B2 · utility

1Cited by

1References

9Claims

0Family size

Assignee

Shanghai Huali Microelectronics Corporation · CN

Inventors

Qiuming Huang · Shanghai, CN
Jun Tan · Shanghai, CN
Jianqin Gao · Shanghai, CN
Jian Zhong · Cenxi, CN

Key dates

Filing date	Aug 12, 2016
Grant date	Nov 28, 2017
Priority date	—
Expiry date	Aug 12, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0212
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of fabricating a semiconductor device is disclosed. The method includes the steps of forming recesses in a semiconductor substrate; epitaxial growing a first SiGe seed layer with constant Ge content in the recesses; epitaxial growing a second SiGe layer with a constant Ge content higher than the Ge content of first SiGe seed layer on the first SiGe seed layer; epitaxial growing a third SiGe layer with a constant Ge content lower than the Ge content of the second SiGe layer; and forming a cap layer on the third SiGe layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.