Systems and methods for imaging using single photon avalanche diodes
US9831283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2014 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Dec 25, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/6441
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Single-photon avalanche diode includes a central junction having a central p+ area and a deep-n well in contact with the central p+ area, a p-type guard ring disposed between the central junction and the deep-n well, and a shallow trench isolation separated from the central p+ area. Imaging apparatus includes a plurality of pixels, each pixel comprising a complementary metal-oxide-semiconductor-implemented single photon avalanche device and one or more signal converters electrically coupled thereto and configured to detect changes in output therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.