Method of manufacturing an imaging device
US9831284B2 · kind B2 · utility
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1References
13Claims
0Family size
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Key dates
| Filing date | Feb 26, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Feb 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.