Integrated circuits with deep trench isolations and methods for producing the same
US9831304B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Sep 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/585
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, a method of producing an integrated circuit includes determining a guard ring width within an integrated circuit design layout, where a guard ring with the guard ring width surrounds an active area in the integrated circuit design layout. A deep trench location is calculated for replacing the guard ring, where the deep trench location depends on the guard ring width. The guard ring in the integrated circuit design layout is replaced with a deep trench having the deep trench location. The deep trench is formed within a substrate at the deep trench location, where the deep trench surrounds the active area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.