Transistor with source and drain electrodes connected to an underlying light shielding layer
US9831349B2 · kind B2 · utility
1Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.