Semiconductor light emitting device and method of manufacturing the same
US9831378B2 · kind B2 · utility
2Cited by
39References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 3, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Jun 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.