Method for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip for the production of a radiation-emitting semiconductor component, and radiation-emitting semiconductor component

US9831390B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Ion Stoll · Tegernheim, DE
• Sebastian Taeger · Bad Abbach, DE
• Hans-Christoph Gallmeier · Regensburg, DE
• Gudrun Lindberg · Bad Abbach, DE
• Stefan Hartauer · Wolfsegg, DE

Key dates

• Filing date: Sep 16, 2013
• Grant date: Nov 28, 2017
• Expiry date: Sep 18, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/882

Abstract

A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.