Patent · US Active

Quantum dots with multiple insulator coatings

US9831397B2 · kind B2 · utility

4Cited by
0References
8Claims
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Key dates

Filing dateMar 8, 2016
Grant dateNov 28, 2017
Priority date
Expiry dateMar 8, 2036

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/95
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.