Magnetic memory devices having perpendicular magnetic tunnel junction
US9831422B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 21, 2015 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Oct 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer. Here, the polarization enhancement layer contains cobalt, iron, and at least one of the elements of Group IV, and the polarization enhancement layer has a magnetization direction perpendicular to or substantially perpendicular to a top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.