Magnetic memory and method for manufacturing same
US9831423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Sep 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic memory includes a structure body including a first magnetic layer and a conductive layer, a second magnetic layer, a first electrode, a second electrode, a third magnetic layer, an intermediate layer, a third electrode, a fourth magnetic layer, and a circuit element. The first magnetic layer is disposed between the second magnetic layer and the conductive layer. The first electrode is connected to a first portion of the structure body. The intermediate layer is provided between the third magnetic layer and the second magnetic layer. The circuit element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. The first semiconductor layer is connected to the first electrode. The second semiconductor layer is connected to the third magnetic layer. The third semiconductor layer is connected to the first semiconductor layer and the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.