CBRAM device and manufacturing method thereof
US9831426B2 · kind B2 · utility
4Cited by
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15Claims
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Key dates
| Filing date | May 12, 2015 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | May 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Provided are a conductive bridging random access memory (CBRAM) device and a manufacturing method thereof. The CBRAM device includes a first electrode, a semiconductor oxide electrolyte layer formed on the first electrode and including a plurality of metal vacancies, a second electrode formed on the semiconductor oxide electrolyte layer, wherein when a positive voltage is applied to the second electrode, cations are reduced to the metal vacancies in the semiconductor oxide electrolyte layer to form a metal bridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.