Method for forming PN junction in graphene with application of DNA and PN junction structure formed using the same
US9831452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2014 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Sep 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/761
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.