Four-terminal gate-controlled thin-film organic thyristor

US9831453B2 · kind B2 · utility

Assignee

• INDIAN INSTITUTE OF TECHNOLOGY KANPUR · IN

Inventors

• Baquer Mazhari · Kanpur, IN
• Arjit Ashok · Kanpur, IN

Key dates

• Filing date: Dec 28, 2013
• Grant date: Nov 28, 2017
• Expiry date: Dec 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/84

Abstract

Technologies are generally described for a four-terminal, gate-controlled, thin-film thyristor device. The thyristor device may essentially be an n-type thin-film transistor (TFT) with an additional emitter terminal. The thyristor device may exhibit an S-shaped negative differential resistance (NDR) characteristic resulting from conductance modulation. The conductance modulation may be caused by formation of a secondary channel for current flow due to an inherent structure of the device. The secondary channel may be formed in a semiconductor area within the device, the semiconductor area including a hole transporting organic semiconductor layer (HTL) and an electron transporting organic semiconductor layer (ETL). A gate terminal of the thyristor device may further allow onset of NDR characteristics to be controlled and may allow the device to be switched off.