RC-IGBT switching pulse control
US9831865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2013 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Apr 5, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for controlling a first and a second reverse-conducting insulated gate bipolar transistor (RC-IGBT), electrically connected in series, is disclosed. A collector of the first RC-IGBT is electrically connected to a positive pole of a direct current voltage source, and an emitter of the second RC-IGBT is electrically connected to a negative pole of the DC voltage source. Further, an emitter of the first RC-IGBT is electrically connected to a collector of the second RC-IGBT to form an alternating current terminal. A gate voltage is applied to respective gates of the first and second RC-IGBTs, wherein the gate voltage is controlled based on a magnitude and a direction of an output current on the AC terminal and on a command signal alternating between a first and a second value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.