Patent · US Active

Gain/flatness enhancement for RF switch matrix

US9831940B2 · kind B2 · utility

9Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 1, 2015
Grant dateNov 28, 2017
Priority date
Expiry dateDec 1, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH04W52/52
  • WIPO fieldTelecommunications
  • WIPO sectorElectrical engineering

Abstract

A method including determining that a first radio frequency (RF) port has been selected to be coupled via an M by N RF switch matrix to a second RF port, wherein the M by N radio frequency (RF) switch matrix includes M first-side RF ports and N second-side RF ports, the first RF port is included in the M first-side RF ports, the second RF port is included in the N second-side RF ports, M is at least 2 and N is at least 2, and each of the first-side RF ports may be selectively coupled to and uncoupled from at least one of two or more of the second-side RF ports, such that RF signals are carried between selectively coupled RF ports; obtaining a first indicator indicating a frequency, frequency range, channel, or band for an RF signal to be carried via the second RF port while coupled to the first RF port; obtaining, in response to the determination that the first RF port has been selected to be coupled to the second RF port, a first adjustment value based on the first indicator, the first RF port, and the second RF port; and causing a first amplitude adjustment device configured to attenuate and/or amplify an RF signal as it passes through the first RF port or the second RF port with…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.