PZT precursor solution, method for producing PZT precursor solution, method for producing PZT film, method for producing electromechanical transducer element, and method for producing liquid discharge head
US9834853B2 · kind B2 · utility
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11References
10Claims
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Key dates
| Filing date | Dec 19, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Dec 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/2047
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A PZT precursor solution is used for forming a PZT film by a sol-gel method. The PZT precursor solution includes a solvent; a component that forms a crystal of PZT by crystallization, the component being dissolved in the solvent; and an element that inhibits crystal growth of PZT, the element being dissolved in the solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.