Ion implantation apparatus and method of controlling ion implantation apparatus
US9837248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2015 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Jun 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30472
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.