Fabrication method of fast recovery diode
US9837275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2013 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Jun 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention involves a fabrication method of fast recovery diode, which includes following steps: growing a sacrificial oxide layer on a surface of an N− substrate; forming a P type doped field-limiting ring region on the substrate; forming a P type doped anode region on the substrate; removing the sacrificial oxide layer; annealing the substrate to form a PN junction; implanting oxygen into the surface of the substrate by ion implantation; annealing the substrate to form a silicon dioxide layer on the surface of the substrate; removing the silicon dioxide layer; forming an anode electrode and a cathode electrode of the fast recovery diode. The method eliminates the curved parts near the silicon surface of the profile of PN junction, decreases electric field intensity at the surface of the substrate, therefore increases the breakdown voltage and reliability of the fast recovery diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.