Method of manufacturing thin film transistor, and method of manufacturing display apparatus
US9837316B2 · kind B2 · utility
0Cited by
2References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 2, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Dec 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.