Semiconductor structure and fabrication method thereof

US9837323B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Chih Chun Tai · Shanghai, CN
• Lei Fang · Katy, US
• Dae-Sub Jung · Shanghai, CN
• Gangning Wang · Shanghai, CN
• Guangli Yang · Nanhu, CN
• Jiao Wang · Munich, DE
• Hong Wei Sun · Beijing, CN
• Yunpeng PENG · Beijing, CN

Key dates

• Filing date: Jun 29, 2016
• Grant date: Dec 5, 2017
• Expiry date: Jun 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/859

Abstract

The present disclosure provides a method for forming a semiconductor structure. The method includes providing a semiconductor substrate; forming a first active region, a second active region, a third active region, and a fourth active region in the semiconductor substrate; and forming a middle-voltage P well region (MVPW) in each of the first active region and the second region simultaneously and forming a middle-voltage N well (MVNW) region in each of the third active region and the fourth active region simultaneously.