Three-dimensional non-volatile memory structure and manufacturing method thereof
US9837435B1 · kind B1 · utility
16Cited by
5References
20Claims
0Family size
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Key dates
| Filing date | Mar 17, 2017 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Mar 17, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A three-dimensional non-volatile memory structure including a substrate, a stacked structure, a charge storage pillar, a channel pillar, and a ferroelectric material pillar is provided. The stacked structure is disposed on the substrate and includes a plurality of conductive layers and a plurality of first dielectric layers, and the conductive layers and the first dielectric layers are alternately stacked. The charge storage pillar is disposed in the stacked structure. The channel pillar is disposed inside the charge storage pillar. The ferroelectric material pillar is disposed inside the channel pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.