Image sensor devices
US9837461B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 2017 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Jan 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor device is provided. The image sensor device includes a substrate, a first photoelectric conversion unit, a second photoelectric conversion unit, a third photoelectric conversion unit, a plurality of isolation structures, a first doped region, and a second doped region. The first, second, and third photoelectric conversion units are disposed in the substrate. The second photoelectric conversion unit is located between the first photoelectric conversion unit and the third photoelectric conversion unit. The isolation structures are disposed in the substrate between the photoelectric conversion units. The first doped region is formed in the substrate below the isolation structures. The first doped region extends below the third photoelectric conversion unit. The second doped region is formed in the substrate below a part of the first doped region. The second doped region extends below the second photoelectric conversion unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.