Method of manufacturing semiconductor device
US9837489B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Mar 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a second SiC layer of a first conductivity type on a first SiC layer by epitaxial growth, forming a first region of a second conductivity type by selectively ion-implanting first impurities of the second conductivity type into the second SiC layer, removing a portion of the first region, forming a third SiC layer of the first conductivity type on the second SiC layer by epitaxial growth, and forming a second region of the second conductivity type on the first region by selectively ion-implanting second impurities of the second conductivity type into the third SiC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.